Products Description
As an important semiconductor material, germanium plays an irreplaceable role in infrared optics, high-speed electronic devices, phase change storage and other fields.
Germanium is a chemical element with the symbol Ge and atomic number 32. It is a lustrous, hard-brittle, grayish-white metalloid in the carbon group, chemically similar to its group neighbours silicon and tin. Pure germanium is a semiconductor with an appearance similar to elemental silicon. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature.
Germanium sputtering targets are made of 5N germanium crystals, due to its wide transmission range in the infrared and opaqueness in the visible light regions, germanium sputtering targets are used for depositing germanium thin film on the optic of thermal imaging camera. Such optics are usually working in the 8 to 14 micron range for passive thermal imaging and for hot-spot detection in military, mobile night vision, and fire fighting applications. It's also used in infrared spectroscopes and other optical equipment that require extremely sensitive infrared detectors. But as germanium thin film has a very high refractive index (4.0), so it must be coated with a anti-reflection film.
Specification
Target Materials: Germanium Ge
Crystal structure: Monocrystalline, polycrystalline
Purity: 5N, 6N
Conduction Type: N type
Resistivity: 0.03-50Ω.cm
Refractive index (10um): 4.0026
Absorption coefficient (/cm): ≤ 0.03
Optical transmittance: 46%
Surface finish: Ra 1.6um
Round target size: Diameter ≤ 450mm, thickness ≥ 0.5mm
Rectangle target size: 205 x 205mm max
Application
1) Infrared optical system
8-14μm atmospheric window: Ge film as infrared lens anti-reflection film (reflectivity <1%)
Thermal imager: Ge/Si multilayer film achieves band-selective detection
(2) Advanced electronic devices
Silicon-based heterogeneous integration: strained Ge channel improves MOSFET mobility (3 times that of Si)
Spin electronics: Ge/MnGe quantum dots prepare spin-polarized sources
(3) Phase change memory
Ge-Sb-Te (GST) alloy target: used for 3D Xpoint storage unit
Threshold switch: Ge-Te film achieves ns-level switching speed
(4) Radiation detection
High-purity Ge detector: γ-ray energy resolution <0.2% (better than Si)
Related Sputtering Materials
CrGe sputtering target
GeO2 sputtering target
GeTe50/50at% sputtering target
GeSe50/50at% sputtering target
Ge2Sb2Te5at% sputtering target
Ge15Te85at% sputtering target
FAQ
Are you a factory or manufacturer?
A: Yes, we are a factory but we generally use our trading company to handle the business abroad. It will be more convenient to receive the remittance and arrange the shipment.
What is the delivery method?
A: Generally, we send cargo by UPS, DHL or FedEx. Also, we can send by sea to seaport or by air to the closest airport.
Why is your product so cost-effective?
A: We cut out the middlemen in the end-to-end manufacturing process. We obtain our raw material directly from its source.
Do you do spot quality inspection or full inspection?
A: 100% full inspection. Inspectors will check the finished product individually, to ensure they adhere to all parameters. All unqualified products are discarded.
How do you ensure your lead time?
A: From material preparation to machining, and finally to a full inspection. Every stage of production is strictly monitored and controlled to give you an accurate delivery time.
What is the MOQ ?
A: Depends on quantity, generally, no MOQ limit.
How to pay for it?
A: A bank transfer (T/T) will be acceptable.
What is the delivery time?
A: around 7-20 days which depends on the quantity and production.
What is kind of the package?
A: Generally, we use a carton case or plywood case with protective material inside to ensure the save of cargo
What is the lead time?
A: from order placed to cargo receiving will take around 10-25 days.
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