Ceramic Sputtering Targets

  • 4N ZrO2 Sputtering Target With Cu Backplate
    Our zirconium dioxide sputtering targets with backing plates are fabricated using high-purity zirconium dioxide material, securely bonded to a metal backing plate; this design ensures rapid heat...
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  • ZrC Sputtering Target With Cu Backplate
    Our Zirconium Carbide (ZrC) sputtering targets with copper backing plates feature a robust bond between the high-purity ZrC target material and the copper backing. This design ensures excellent...
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  • Ta 5at% Doped ZrC Sputtering Target
    Precise doping of Zirconium Carbide with a 5 atomic percent ratio of Tantalum significantly enhances the target material's high-temperature resistance, thermal shock resistance, and corrosion...
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  • 4N IGZO Sputtering Target
    Our 4N IGZO sputtering targets deliver more stable and efficient sputtering performance. Specialized for high-end display and semiconductor applications, they facilitate the realization of...
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  • 4N HfO2 Target With Cu Backplate
    The 4N HfO₂ Sputtering Target with Copper Backing utilizes 99.99% purity hafnium oxide material. Integrated with a copper backing, it offers excellent thermal conductivity and is ideally suited...
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  • 4N HfO2 Doped With 2% Ti Target
    The 2% Ti-doped HfO₂ sputtering target is fabricated using a high-purity hafnium oxide substrate, precisely doped with 2% titanium. Characterized by its compositional uniformity and high density,...
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  • 4N HfO2 Sputtering Target
    4N High-Purity Hafnium Dioxide Sputtering Target (99.99% Purity)—suitable for applications in optical coatings, semiconductors, and precision electronics. Features high density, uniform...
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  • B4C Sputtering Target
    Utilizing high-purity boron carbide raw materials, this product features exceptional hardness and robust thermal stability, making it ideal for applications in semiconductor manufacturing, optical...
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  • Customized HfC Particles
    Description Of Customized HfC Particles HfC particles are typically synthesized by reacting hafnium dioxide (HfO₂) with carbon at high temperatures (1900–2300℃) in an inert or reducing...
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  • Hafnium Oxide (HfO2) Sputtering Target
    Zirconia (ZrO2), also known as zirconium dioxide, is a very important high-performance ceramic material. Due to its high melting point, high flexural strength and chemical stability, it is widely...
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  • Indium Oxide (In2O3) Sputtering Target
    Indium Oxide Sputtering Target can be used in semiconductor, chemical vapor deposition (CVD), physical vapor deposition (PVD) display, and optical applications.
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  • Indium Tin Oxide (ITO) Sputtering Target
    ITO target material is important. It’s a transparent conductive material. ITO targets are used a lot in making thin films for electronic and optoelectronic devices. ITO can conduct electricity...
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Tungsten Copper Alloy Tube,