Description of 4N HfO2 Doped with 2% Ti Target
The HfO2 doped with 2% Ti target is a functional material precursor prepared through precise, atomic-level doping techniques. At its core, this material involves the introduction of titanium into a hafnium dioxide matrix at a molar ratio of 2%, forming a solid solution in which Ti⁴⁺ ions partially substitute for Hf⁴⁺ ions in the HfO₂ crystal lattice. This doping process is not merely a simple physical mixture; rather, it is designed to actively modulate the material's microstructure and electronic properties, thereby endowing it with specific functionalities that surpass those of pure HfO₂. The physical form of the sputtering target serves as the critical vehicle for its application in advanced thin-film fabrication technologies. Such targets must adhere to rigorous standards for high purity (typically 99.99% or higher), high density, and compositional uniformity. High purity is essential to prevent uncontrolled impurities from compromising the performance of the resulting thin film; conversely, high density and uniformity ensure the stability of both the film's composition and its deposition rate during the sputtering process, thereby enabling the thin film to precisely "inherit" the designed characteristics of the target material.
Applications of 4N HfO2 Doped with 2% Ti Target
Advanced Semiconductor Memory: Particularly in the field of Ferroelectric Random-Access Memory (FeRAM). Titanium doping helps stabilize the ferroelectric orthorhombic phase of HfO₂, endowing it with excellent ferroelectric switching characteristics that meet the requirements for high-density, low-power memory devices.
High-Dielectric-Constant (High-κ) Gate Dielectrics: In integrated circuits, it serves as the dielectric layer for transistor gates; by leveraging its high dielectric constant, it effectively reduces the physical thickness while maintaining excellent insulation performance and reliability.
Functional Coatings and Optical Thin Films: Capitalizing on its high refractive index, excellent chemical stability, and optical properties-which can be tuned through doping-it is utilized in specialized optical coatings or protective layers.
Specifications of 4N HfO2 Doped with 2% Ti Target
Size: 50.8mm dia. *3mm tk
Type of bonding: In
Backplate: Cu
Backplate size: 50.8mm dia *3mm tk
Quality Control and Testing Of 4N HfO2 Doped with 2% Ti Target
FAQ For 4N HfO2 Doped with 2% Ti Target
Are you a factory or a manufacturer?
A: Yes, we are a 4N HfO2 Doped with 2% Ti Target factory, but we generally use our trading company to handle the business abroad. It will be more convenient to receive the remittance and arrange the shipment.
What is the delivery method?
A: Generally, we send 4N HfO2 Doped with 2% Ti Target by UPS, DHL, or FedEx. Also, we can send by sea to a seaport or by air to the closest airport.
Why is your 4N HfO2 Doped with 2% Ti Target so cost-effective?
A: We cut out the middlemen in the end-to-end manufacturing process, and we obtain raw material directly from its source.
Do you do spot quality inspection of products?
A: 100% full inspection for sure. All unqualified 4N HfO2 Doped with 2% Ti Targets are discarded.
How do you ensure your lead time?
A: From material preparation to machining and finally to a full inspection. Every stage of production is strictly monitored and controlled to give you an accurate delivery time.
What is the MOQ of 4N HfO2 Doped with 2% Ti Target?
A: Depends on the quantity of 4N HfO2 Doped with 2% Ti Target; generally, no MOQ limit.
How to pay for the products?
A: A bank transfer (T/T) will be acceptable.
What is the delivery time?
A: Around 7-20 days, which depends on the quantity and production of 4N HfO2 Doped with 2% Ti Target.
What kind of package is it?
A: Generally, we use a carton case or plywood case with protective material inside to ensure the safety of 4N HfO2 Doped with 2% Ti Target.
What is the lead time?
A: From the order placed to cargo receiving will take around 10-25 days.
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