Products Description
The indium sputtering target is a silver glossy gray target composed of high-purity indium (In). Its melting point is 156.61°C, boiling point is 2060°C, and density is 7.3 g/cm3. The texture is very soft, can be scored with nails, has strong plasticity, is malleable, can be pressed into sheets, and is a fusible metal. One of its distinguishing features is its ability to adhere to glass and other similar surfaces. Indium compounds evaporate under vacuum to form thin films in the production of electronic products and photovoltaic cells. Pure indium is used as a thin film layer in semiconductors.
Manufacturing process of indium sputtering target
Preparation-Melting-Chemical-Analysis-Forging-Rolling-Annealing-Metallographic Inspection-Machining-Dimensional Inspection-Cleaning-Final Inspection-Packaging
Specification of indium sputtering target
| Characteristic | Value/Description | Application Significance |
|---|---|---|
| Atomic Number | 49 | Positioned as a Group IIIA metal |
| Density | 7.31 g/cm³ | Basis for controlling thin film thickness |
| Melting Point | 156.6°C | Compatibility with low-temperature processes |
| Resistivity | 83.7 nΩ·m | Foundation for transparent conductive films |
| Reflectance (visible light) | >90% | Application in reflective mirror coatings |
| Hall Mobility | 50 cm²/V·s | Performance metric for TFTs |
| Neutron Capture Cross Section | 190 barns | Potential for use as nuclear shielding material |
Application of indium sputtering target
(1) Display technology
ITO film: In₂O₃:Sn target (resistance <100Ω/□, transmittance >90%)
Flexible OLED: In-Zn-O (IZO) amorphous film (bending radius <1mm)
(2) Semiconductor packaging
Low-temperature bonding: In-Sn alloy solder film (melting point 120°C, thermal conductivity >80W/m·K)
3D IC: In micro-bumps (diameter <10μm, eutectic temperature 157°C)
(3) Quantum devices
Topological insulator: InSb film (quantum spin Hall effect)
Superconducting circuit: In/Al heterojunction (coherence time >10ns)
(4) Energy field
CIGS solar cell: In-Se prefabricated layer (conversion efficiency >23%)
Thermoelectric material: In₄Sn₃Te₁₂ film (ZT value >1.2)
Related Sputtering Materials
In2O3 sputtering target
ln2Te3 sputtering target
In2O3/SnO2 90/10wt% sputtering target
InGaZnO4 sputtering target
In2O3/ZnO 90/10wt% sputtering target
FAQ
Are you a factory or manufacturer?
A: Yes, we have a factory but we generally use our trading company to handle the business abroad. It will be convenient to receive the remittance and arrange the shipment.
What is the delivery method?
A: Generally, we send cargo by UPS, DHL or FedEx. Also, we can send by sea to seaport or by air to the closest airport.
Why is your product so cost-effective?
A: A: We cut out the middlemen in the end-to-end manufacturing process. We obtain our raw material directly from its source.
Do you do spot quality inspection or full inspection?
A: 100% full inspection. Inspectors will check the finished product individually, to ensure they adhere to all parameters. All unqualified products are discarded.
How do you ensure your lead time?
A: We have an efficient Order Management System, from material preparation to machining, and finally to a full inspection. Every stage of production is strictly monitored and controlled to give you an accurate delivery time.
What is the MOQ ?
A: Depends on quantity, generally, no MOQ limit.
How to pay for it?
A: A bank transfer (T/T) will be acceptable.
What is the delivery time?
A: around 7-20 days which depends on the quantity and production.
What is kind of the package?
A: Generally, we use a carton case or plywood case with protective material inside to ensure the save of cargo
What is the lead time?
A: from order placed to cargo receiving will take around 10-25 days.
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