Nickel-silicon alloys (NiSi) targets consist of a combination of nickel (Ni) and silicon (Si) that are usually present in a purity of 99.9 % (3N) or higher. As a result of incorporating the electrical and thermal conductivity of nickel along with the semiconductor traits of silicon, these materials are classified as both "high-temperature alloys" and as being sputtering sources for functional films. Ni-Silicon (NiSi) alloy sputtering targets serve a crucial function in the manufacturing of low-resistivity silicide layers in the semiconductor sector. Neurotech, as a NiSi film, demonstrates remarkable conductivity along with good thermal stability for use in the interconnects and ohmic contacts in integrated circuits. In order to enhance the performance and reliability of the silver devices, the alloy, along with the silicon, forms nickel silicide, which is a vital component in the advanced CMOS technology for high-performance, fast, and efficient electrical interconnections.
How a Nickel-Silicon Alloy Target Material is Prepared
1. Preparing Raw Materials. To achieve the best result, we only used pure nickel and pure silicon and measured the precise stoichiometric amounts according to the target alloy phase (e.g., Ni/Si 90/10 at%, 80/20 at%).
2. Vacuum Melting. Silicon and nickel raw materials are poured into a crucible (often a water-cooled copper crucible). Induction heating completely melts it with zirconium and forms it into a molten alloy. This happens in a high-temperature, low-vacuum environment with gaseous impurities such as H, O, and N. During the molten stage, we use electromagnetic stirring to further refine the zirconium in order to achieve a liquid alloy. The molten alloy combination is poured into a copper mold, cooled, and solidifies into a nickel-silicon alloy ingot.
3. Homogenization Heat Treatment. The ingot is placed in a homogenous heat treatment in a vacuum or a protective atmosphere (e.g., Ar gas) around it. He is kept at a temperature below the solidus temperature for as long as possible (e.g., 1000402 for 10 hours).
4. Hot Machining (Hot Forging/Hot Rolling): The homogenized ingot is heated to above the recrystallization temp (ex., 800-1000°C) and is then hot forged or hot rolled.
5. Machining: The hot-processed billet is machined to the target dimensions and final shape of the target material with high precision using a rotating and milling machine and grinding methods.
Applications of Nickel-Silicon Alloy Sputtering Targets
Semiconductor Interconnects/Contact Layers: NiSi thin films serve as contact metals, reducing contact resistance.
Thin Film Resistors and Strain Gauges: Low temperature coefficient of resistance (TCR) characteristics make them suitable for hybrid ICs and MEMS pressure sensors.
Surface Electron Emission Layers: Used as emitter materials in vacuum microelectronics and field emission devices;
Low-E and Energy-Saving Coatings: When combined with chromium and silicon, they can improve the oxidation resistance and corrosion resistance of glass films.
Photovoltaics and Displays: Used for combined sputtering of transparent conductive films, electrodes, or barrier layers.
