Ion Implantation Tungsten Filament
Ion Implantation Tungsten Filament

Ion Implantation Tungsten Filament

Ion implantation tungsten wire is a key component used in ion implantation machines, mainly in semiconductor manufacturing processes. This type of tungsten wire plays an important role in semiconductor equipment, and its quality and performance directly affect the efficiency of IC process lines.
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Description of Ion Implantation Tungsten Filament

 

High-purity ion implantation tungsten filament is a filament used in ion implantation equipment. It is designed to withstand the harsh conditions of the ion implantation process, where ions are accelerated and injected into the target material.

 

Ion implantation tungsten wire is a key component used in ion implantation machines, mainly in semiconductor manufacturing processes. This type of tungsten wire plays an important role in semiconductor equipment, and its quality and performance directly affect the efficiency of IC process lines. The ion implantation machine is key equipment in the manufacturing process of large-scale integrated circuits, and the role of tungsten wire as an ion source cannot be ignored.

 

Manufacturing process and micro-control of Ion Implantation Tungsten Filament


The powder metallurgy process
Co-reduction method powder making:

WO₃+ReO₃ mixed hydrogen reduction (800℃/H₂) to obtain W-Re composite powder (composition deviation <0.5%).

Rotary forging:

Multiple hot rotary forging (1200℃→800℃), diameter from 10mm→0.5mm, grain fiberization (aspect ratio>20:1).

Annealing process:

Step annealing (1400℃/1h→1600℃/0.5h), eliminate residual stress (XRD half peak width reduced by 40%).

Surface treatment technology
Electrolytic polishing:

Mixed acid (NaOH+Na₂CO₃ electrolyte), surface roughness Ra from 1.2μm→0.05μm (AFM detection).

CVD SiC coating:

Depositing a 2μm coating at 1100℃ reduces the plasma erosion rate by 90% (ITER test data).

 

Features of Ion Implantation Tungsten Filament

 

Ultra-high Purity and Minimal Contamination: The use of ultra-high purity tungsten materials renders the contamination and interference of products and wafers during ion implantation impossible.

Very Fine Grain Structure: The material possesses a smooth grain structure, which enhances the surface's smoothness, improves its mechanical performance, and gives it a fine grain structure.

Very High Melting Point and Heat Resistance: Tungsten possesses an extremely high melting point; therefore, it is stable during ion implantation and at high temperatures, stays stable.

Good Chemical Stability: It resists high temperature reactions and remains chemically stable, which enhances the material's service life.

High Precision Scope: Tungsten implants parts that require high-precision complex techniques or advanced equipment can be worked on using precision tools.

product-1033-564

 

Applications of Ion Implantation Tungsten Filament

 

Semiconductor Manufacturing
Ion implantation is a critical process in semiconductor manufacturing. It precisely controls dopant dosage and depth to adjust electrical properties. Tungsten wires serve as a key component of the ion source, ensuring stable electron emission.

Solar Energy Industry
Tungsten is used to produce rotary sputtering targets for solar cell manufacturing.

X-ray and Electron Tubes
In X-ray and electron tubes, tungsten wires generate electron beams, enabling X-ray production or electron transmission.

Surface Treatment and Materials Research
In materials science, ion implantation enhances metal surface properties like hardness and wear resistance. Tungsten wires provide the necessary ion source for this process.

 

product-840-576

 

Specifications of Ion Implantation Tungsten Filament

 

Dimensions

Customized

Application

semiconductor

Surface

polished

Purity

99.95%

Material

W1

Density

19.3g/cm3

Execution standards

GB/T 4181-2017

Melting point

3400℃

Impurity content

0.01%

Quality Control Testing Of The Material

 

product-760-700

 

Technological innovation of Ion Implantation Tungsten Filament


Nanostructure design
Nanocrystalline tungsten wire (<50nm):

Prepared by high-pressure torsion (HPT), tensile strength 2.5GPa (conventional 1.2GPa), but ductility is only 1%.

Hollow tungsten wire:

Inner diameter 50μm, outer diameter 200μm, used for microchannel cooling (heat load bearing capacity increased by 5 times).

Intelligent monitoring
Embedded FBG sensor:

Fiber optics are integrated inside the tungsten wire to monitor strain in real time (accuracy ±5με) and warn of fracture risks.

 

FAQ for Ion Implantation Tungsten Filament

 

Are you a factory or a manufacturer?

A: Yes, we are a factory, but we generally use our trading company to handle the business abroad. It will be more convenient to receive the remittance and arrange the shipment.

What is the delivery method?

A: Generally, we send cargo by UPS, DHL, or FedEx. Also, we can send by sea to a seaport or by air to the closest airport.

Why is your product so cost-effective?

A: We cut out the middlemen in the end-to-end manufacturing process, and we obtain raw material directly from its source.

Do you do spot quality inspection or full inspection?

A: 100% full inspection for sure. All unqualified products are discarded.

How do you ensure your lead time?

A: From material preparation to machining and finally to a full inspection. Every stage of production is strictly monitored and controlled to give you an accurate delivery time.

What is the MOQ of Ion Implantation Tungsten Filament?

A: Depends on quantity; generally, no MOQ limit.

How to pay for it?

A: A bank transfer (T/T) will be acceptable.

What is the delivery time?

A: around 7-20 days, which depends on the quantity and production.

What kind of package is it?

A: Generally, we use a carton case or a plywood case with protective material inside to ensure the safety of the cargo

What is the lead time?

A: From the order placed to cargo receiving will take around 10-25 days.

 

product-700-700

product-700-700

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